Citation:
C. Zhou, X. Wang, W. Xu, Y. Zhu, V. J. Reddi, and C. H. Kim, “Estimation of Instantaneous Frequency Fluctuation in a Fast DVFS Environment Using an Empirical BTI Stress-Relaxation Model,” in Proceedings of the International Reliability Physics Symposium (IRPS), 2014, pp. 2D–2.
 | Paper | 964 KB |
| Presentation | 2.41 MB |
Abstract:
This work proposes an empirical Bias Temperature Instability (BTI) stress-relaxation model based on the superposition property. The model was used to study the instantaneous frequency fluctuation in a fast Dynamic Voltage and Frequency Scaling (DVFS) environment. VDD and operating frequency information for this study were collected from an ARM Cortex A15 processor based development board running an Android operating system. Simulation results show that the frequency peaks and dips are functions of mainly two parameters: (1) the amount of stress or recovery experienced by the circuit prior to the VDD switching and (2) the frequency sensitivity to device aging after the VDD switching.